s12m15-b series maximum ratings (tj= 25 unless otherwise noticed) features blocking voltage to 600 volts on-state current rating of 12 amperes rms at 80 rugged, economical to220ab package glass passivated junctions for reliability and unif ormity minimum and maximum values of igt, vgt an ih specif ied for ease of design high immunity to dv/dt - 100 v/msec minimum at 125 pb-free package mechanical data case: molded plastic weight: 0.07 ounces, 2.0 grams sensitive gate sillicon controlled rectifiers reverse blocking thyristors scrs 12 amperes rms 400 thru 600 volts semiconductor lite-on rating symbol value unit peak repetitive offC state voltage ( t j = -40 to 125 , sine wave, 50 to 60 hz; gate open) s12m15-400b s12m15-600b v drm , v rrm 400 600 volts on-state rms current (180 conduction angles,tc=80 ) i t(rms) 12 amp peak non-repetitive surge current (1/2 cycle, sine wave 60 hz,tj = 25 ) (1/2 cycle, sine wave 50 hz,tj = 25 ) i tsm 125 120 amp circuit fusing consideration (t = 8.3 ms) (t = 10 ms) i t 64 72 a s forward peak gate power (pulse width 1.0us,t j = 80 ) p gm 5.0 watt forward average gate power (t=8.3ms, tc = 80 ) p g(av) 0.5 watt forward peak gate current (pulse width 1.0us,tc= 80 ) i gm 2.0 amp operating junction temperature range t j -40 to +125 storage temperature range tstg -40 to +150 2 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; pos itive gate voltage shall not be applied concurrent with negative potential on the anode. b locking voltages shall not be tested with a constan t current source such that the volta ge ratings of the devices are exceeded rev. 9,mar-2010, ktxc01 Q Q 1 cathode 2 anode 3 gate 4 anode pin assignment 2 to-220ab all dimensions in millimeter to-220ab dim. min. max. ac d ef g h b 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 2.79 n m l k j i 1.14 2.29 0.67 0.40 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 o 1.37 1.17 h h a b c k j i g f e d n m l pin 1 3 2 o
characteristic symbol value unit thermal resistance - junction to case - junction to amb ient rthjc rthja 2.2 62.5 / w maximum lead temperature for soldering purposes 1/8 " from case for 10 seconds t l 260 characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 (v d =rated v drm and v rrm ; gate open) t j =125 i drm i rrm ---- ---- ---- ---- 10 2.0 ua ma gate trigger current (v d = 12 v; rl =100 ohms) i gt 2.0 8.0 15 ma holding current (v d = 12 v, gate open, initiating current = 200 ma) i h 4.0 20 40 ma latch current (v d =12v,ig = 20ma ) i l 6.0 25 60 ma gate trigger voltage (v d = 12 v; r l = 100 ohms) v gt 0.5 0.65 1.0 volts peak forward on-state voltage (i tm = 24 a peak @tp 2.0 ms, duty cycle 2%) Q Q v tm ---- ---- 2.2 volts critical rate of rise of off-state voltage (v d =rated v drm ,exponential waveform, gate open,t j =125 ) dv/dt 100 250 ---- v/us repetitive critical rate of rise of on-state curren t ipk=50a,pw=40 usec,di/dt=1a/usec,igt=50ma di/dt ---- ---- 50 a/us thermal characteristics electrical characteristics (t j =25 unless otherwise noted) off characteristics on characteristics dynamic characteristics rating and characteristic curves s12m15-b series
rating and characteristic curves s12m15-b series
rating and characteristic curves s12m15-b series specifications mentioned in this publication are su bject to change without notice.
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